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baocheng 8205
baocheng 8205
Manufacturer:baocheng
Model Number:8205
Minimum Order Quantity:500
Standard Packaging:TSSOP-8
Delivery Time:12-40 weeks
Product Details
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(On):
34mΩ@2.5V
Gate Threshold Voltage (Vgs(Th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
74.69pF
Output Capacitance(Coss):
98.48pF
Input Capacitance(Ciss):
522.3pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.2nC@4.5V
Product Description
Detailed Specifications & Features
Product Overview
The 8205 Power MOSFET is an N-channel device designed for portable and battery-powered equipment. It is supplied in 8 wafer form and features a 20V drain-source voltage and a 5A continuous drain current. This MOSFET is sampling tested at probe, ensuring quality for demanding applications.
Product Attributes
- Die in 8 Wafer Form
- N-channel
Technical Specifications
| Electrical Characteristics | Symbol | Parameter | Conditions | Min | Typ | Max | Units | ||
|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings TA=25C unless otherwise noted | BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 20 | -- | -- | V | ||
| RDS(on) | Drain-Source On-Resistance | VGS =4.5V, ID =4A | 20.5 | -- | 25 | m | |||
| RDS(on) | Drain-Source On-Resistance | VGS =2.5V, ID =3A | 25 | -- | 34 | m | |||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 0.5 | -- | 1.0 | V | |||
| IDSS | Drain Current (Zero Gate Voltage) | VDS = 20V, VGS = 0V | -- | -- | 1 | uA | |||
| IGSS | Gate Current (Zero Drain Voltage) | VGS = 8V, ID=0 | -- | -- | 100 | nA | |||
| Qg | Total Gate Charge | VDS = 10V, ID = 5A, VGS = 4.5V | -- | 6.2 | 8.2 | nC | |||
| Qgs | Gate-Source Charge | -- | 1.6 | 2.2 | nC | ||||
| Qgd | Gate-Drain Charge | -- | 1.4 | 1.74 | nC | ||||
| td(on) | Turn-on Delay Time | VDD = 10V, ID = 5A | -- | 10.5 | 20.8 | ns | |||
| tr | Turn-on Rise Time | ID = 1A, VGS = 4.5V | -- | 4.6 | 8.8 | ns | |||
| td(off) | Turn-off Delay Time | -- | 27.3 | 54.72 | ns | ||||
| tf | Turn-off Fall Time | -- | 4.2 | 8.32 | ns | ||||
| Ciss | Input Capacitance | VDS = 8V, VGS = 0V, f=1.0MHz | -- | 522.3 | -- | pF | |||
| Coss | Output Capacitance | -- | 98.48 | -- | pF | ||||
| Crss | Reverse Transfer Capacitance | -- | 74.69 | -- | pF | ||||
| Diode Characteristics | IS | Diode Maximum Forward Current | -- | -- | 1.7 | A | |||
| VSD | Diode Forward Voltage | IS = 1.7A, VGS = 0V | -- | -- | 1.2 | V | |||
| Symbol | Parameter | Conditions | TA = 25C | TA = 75C | Units |
|---|---|---|---|---|---|
| PD | Maximum Power Dissipation | 2 | 1.3 | W |
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 | -- | 150 | |
| RJA | Thermal Resistance Junction to Ambient (PCB Mounted) | -- | 62.5 | -- | /W |
Note: Repetitive Rating: Pulse width limited by maximum junction temperature. Reflow soldering furnace temperature should be controlled below 265C.
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