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KEC MPS8550S-D-RTK/P

KEC MPS8550S-D-RTK/P
Manufacturer:KEC
Model Number:MPS8550S-D-RTK/P
Minimum Order Quantity:9000
Standard Packaging:SOT-23
Delivery Time:5-8 working days
Product Details
Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 350mW
Transition Frequency(FT): 200MHz
Type: PNP
Current - Collector(Ic): 1.5A
Collector - Emitter Voltage VCEO: 25V
Product Description
Detailed Specifications & Features

Product Overview

MPS8550S is an epitaxial planar PNP transistor designed for high current applications. It is complementary to the MPS8050S.

Brand

KELC

Type Name

MPS8550S

Package

SOT-23

Marking

hrg Rank Lot No.
Characteristic Symbol Rating (Ta=25C) Test Condition Min Typ Max Unit
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Collector Power Dissipation PC 625 * mW
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 to 150 C
Collector Cut-off Current ICBO -10 VEB=-35V, IC=0 nA
Emitter Cut-off Current IEBO -10 VEB=-6V, IC=0 nA
Collector-Base Breakdown Voltage V(BR)CBO -30 IC=-100A, IE=0 V
Collector-Emitter Breakdown Voltage V(BR)CEO -30 IE=-2mA, IC=0 V
DC Current Gain hFE(1) VCE=-1V, IC=-5mA 85 160
DC Current Gain hFE(2) VCE=-1V, IC=-100mA 120 200
DC Current Gain hFE(3) VCE=-1V, IC=-800mA 160 300
Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA -0.3 -0.75 V
Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA -0.95 -1.2 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.8 -1.0 V
Transition Frequency fT VCE=-10V, IC=-50mA 100 MHz
Collector Output Capacitance Cob VCE=-10V, f=1MHz, IE=0 50 pF
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